Information card for entry 2200384
Chemical name |
cis-Dicarbonylbis[1,2-ethanediylbis(diphenylphosphine)-P,P']tungsten(0) benzene sesquisolvate |
Formula |
C63 H57 O2 P4 W |
Calculated formula |
C63 H57 O2 P4 W |
SMILES |
C1C[P](c2ccccc2)(c2ccccc2)[W]2(C#[O])(C#[O])([P]1(c1ccccc1)c1ccccc1)[P](CC[P]2(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1.c1ccccc1.c1ccccc1 |
Title of publication |
<i>cis</i>-Dicarbonylbis[1,2-ethanediylbis(diphenylphosphine)-<i>P,P</i>']tungsten(0) benzene sesquisolvate |
Authors of publication |
Filippou, Alexander, C.; Philippopoulos, Athanassios, I.; Ziemer, Burkhard |
Journal of publication |
Acta Crystallographica Section E |
Year of publication |
2001 |
Journal volume |
57 |
Journal issue |
8 |
Pages of publication |
m338 - m340 |
a |
12.675 ± 0.002 Å |
b |
18.259 ± 0.003 Å |
c |
22.864 ± 0.004 Å |
α |
89.15 ± 0.02° |
β |
87.73 ± 0.02° |
γ |
77.31 ± 0.02° |
Cell volume |
5158.1 ± 1.5 Å3 |
Cell temperature |
180 ± 2 K |
Ambient diffraction temperature |
180 ± 2 K |
Number of distinct elements |
5 |
Space group number |
2 |
Hermann-Mauguin space group symbol |
P -1 |
Hall space group symbol |
-P 1 |
Residual factor for all reflections |
0.0295 |
Residual factor for significantly intense reflections |
0.0221 |
Weighted residual factors for all reflections included in the refinement |
0.0534 |
Goodness-of-fit parameter for all reflections included in the refinement |
0.938 |
Diffraction radiation wavelength |
0.71073 Å |
Diffraction radiation type |
MoKα |
Has coordinates |
Yes |
Has disorder |
No |
Has Fobs |
Yes |
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https://www.crystallography.net/2200384.html