Information card for entry 2201131

Structure parameters

• Formula: C8 H34 As6 N16 O34 V4
• Calculated formula: C8 H34 As6 N16 O34 V4
• SMILES: C(=[NH2+])(NC(=O)N)N.C(=[NH2+])(N)NC(=O)N.O1[V]234(O[V]56([O]2[As]2(=[O][V]78(=O)(O[As]([OH])(O3)=O)O[V](O2)(=O)([O]7[As]1(=[O]5)[OH])(O[As](O6)([OH])=O)O[As](O8)([OH])=O)[OH])(=O)O[As](O4)([OH])=O)=O.C(=[NH2+])(NC(=O)N)N.C(=[NH2+])(N)NC(=O)N
• Title of publication: Guanylurea vanadium arsenate
• Authors of publication: Bremner, Colin A.; Harrison, William T. A.
• Journal of publication: Acta Crystallographica Section E
• Year of publication: 2002
• Journal volume: 58
• Journal issue: 6
• Pages of publication: m254 - m256
• a: 8.5376 ± 0.0004 Å
• b: 11.0544 ± 0.0005 Å
• c: 12.4672 ± 0.0005 Å
• α: 83.144 ± 0.001°
• β: 82.652 ± 0.001°
• γ: 69.848 ± 0.001°
• Cell volume: 1091.94 ± 0.08 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0311
• Residual factor for significantly intense reflections: 0.0236
• Weighted residual factors for significantly intense reflections: 0.0625
• Weighted residual factors for all reflections included in the refinement: 0.0643
• Goodness-of-fit parameter for all reflections included in the refinement: 1.012
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: Yes