Information card for entry 2201583

Structure parameters

• Chemical name: cis-bis(amidinothioureato-N,N)~2~Nickel(II)
• Formula: C4 H10 N8 Ni S2
• Calculated formula: C4 H10 N8 Ni S2
• SMILES: [Ni]12([NH]=C(NC(=S)N1)N)[NH]=C(NC(=S)N2)N
• Title of publication: <i>cis</i>-Bis(amidinothioureato-κ^2^<i>N,N</i>')nickel(II)
• Authors of publication: Kabir, Md. Khayrul; Yamada, Koichi; Adachi, Keiichi; Kondo, Mitsuru; Kawata, Satoshi
• Journal of publication: Acta Crystallographica Section E
• Year of publication: 2002
• Journal volume: 58
• Journal issue: 10
• Pages of publication: m580 - m582
• a: 14.804 ± 0.002 Å
• b: 7.8988 ± 0.0014 Å
• c: 9.1216 ± 0.0013 Å
• α: 90°
• β: 111.732 ± 0.012°
• γ: 90°
• Cell volume: 990.8 ± 0.3 ų
• Cell temperature: 295 ± 2 K
• Ambient diffraction temperature: 295 ± 2 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.081
• Residual factor for significantly intense reflections: 0.0527
• Weighted residual factors for significantly intense reflections: 0.1289
• Weighted residual factors for all reflections included in the refinement: 0.1336
• Goodness-of-fit parameter for all reflections included in the refinement: 0.986
• Diffraction radiation wavelength: 0.71069 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: Yes