Information card for entry 2202670

Structure parameters

• Formula: C67 H75 B F16 Si4
• Calculated formula: C67 H75 B F16 Si4
• SMILES: [B-](c1c(F)c(F)c(c(F)c1F)[Si](C)(C)C(C)(C)C)(c1c(F)c(F)c(c(F)c1F)[Si](C)(C)C(C)(C)C)(c1c(F)c(F)c(c(F)c1F)[Si](C)(C)C(C)(C)C)c1c(F)c(F)c(c(F)c1F)[Si](C)(C)C(C)(C)C.[C+](c1ccccc1)(c1ccccc1)c1ccccc1
• Title of publication: Triphenylmethylium tetrakis[4-(<i>p</i>-<i>tert</i>-butyldimethylsilyl)-2,3,5,6-tetrafluorophenyl]borate
• Authors of publication: Bolte, Michael; Bauch, Christian; Müller, Thomas
• Journal of publication: Acta Crystallographica Section E
• Year of publication: 2003
• Journal volume: 59
• Journal issue: 7
• Pages of publication: o950 - o951
• a: 22.064 ± 0.002 Å
• b: 33.477 ± 0.003 Å
• c: 22.73 ± 0.002 Å
• α: 90°
• β: 93.689 ± 0.008°
• γ: 90°
• Cell volume: 16754 ± 3 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.2929
• Residual factor for significantly intense reflections: 0.0785
• Weighted residual factors for significantly intense reflections: 0.2081
• Weighted residual factors for all reflections included in the refinement: 0.2726
• Goodness-of-fit parameter for all reflections included in the refinement: 0.835
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: Yes