Information card for entry 2204129

Structure parameters

• Chemical name: Bis(μ-N,N-dimethylhydrazido-κ^2^N':N')bis[dimethylgallium(III)]
• Formula: C8 H26 Ga2 N4
• Calculated formula: C8 H26 Ga2 N4
• SMILES: C[Ga]1(C)[NH](N(C)C)[Ga](C)(C)[NH]1N(C)C
• Title of publication: Bis(μ-<i>N,N</i>-dimethylhydrazido-κ^2^<i>N</i>':<i>N</i>')bis[dimethylgallium(III)]
• Authors of publication: Hecht, Elmar
• Journal of publication: Acta Crystallographica Section E
• Year of publication: 2004
• Journal volume: 60
• Journal issue: 9
• Pages of publication: m1327 - m1328
• a: 6.7439 ± 0.0001 Å
• b: 8.2016 ± 0.0001 Å
• c: 8.2846 ± 0.0002 Å
• α: 114.052 ± 0.001°
• β: 95.798 ± 0.001°
• γ: 107.406 ± 0.001°
• Cell volume: 385.992 ± 0.013 ų
• Cell temperature: 213 ± 2 K
• Ambient diffraction temperature: 213 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0373
• Residual factor for significantly intense reflections: 0.032
• Weighted residual factors for significantly intense reflections: 0.0772
• Weighted residual factors for all reflections included in the refinement: 0.0795
• Goodness-of-fit parameter for all reflections included in the refinement: 1.072
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: Yes