Information card for entry 2206136
| Chemical name |
syn-exo-4,7,12,15-Tetrakis(trimethylsilyl)-4,7,12,15- tetrahydro[2.2]paracyclophane |
| Formula |
C28 H52 Si4 |
| Calculated formula |
C28 H52 Si4 |
| SMILES |
C1C2[C@@H]([Si](C)(C)C)C=C(CCC3[C@@H]([Si](C)(C)C)C=C(C1)[C@H](C=3)[Si](C)(C)C)[C@H](C=2)[Si](C)(C)C |
| Title of publication |
<i>syn</i>-<i>exo</i>-4,7,12,15-Tetrakis(trimethylsilyl)-4,7,12,15-tetrahydro[2.2]paracyclophane |
| Authors of publication |
Jones, Peter G.; Bubenitschek, Peter; Hopf, Henning; Savinsky, Rainer |
| Journal of publication |
Acta Crystallographica Section E |
| Year of publication |
2005 |
| Journal volume |
61 |
| Journal issue |
7 |
| Pages of publication |
o2177 - o2178 |
| a |
13.906 ± 0.004 Å |
| b |
13.906 ± 0.004 Å |
| c |
16.263 ± 0.005 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
3144.9 ± 1.6 Å3 |
| Cell temperature |
143 ± 2 K |
| Ambient diffraction temperature |
143 ± 2 K |
| Number of distinct elements |
3 |
| Space group number |
98 |
| Hermann-Mauguin space group symbol |
I 41 2 2 |
| Hall space group symbol |
I 4bw 2bw |
| Residual factor for all reflections |
0.0489 |
| Residual factor for significantly intense reflections |
0.0404 |
| Weighted residual factors for significantly intense reflections |
0.1065 |
| Weighted residual factors for all reflections included in the refinement |
0.1142 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.068 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
Yes |
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https://www.crystallography.net/2206136.html