Information card for entry 2213299

Structure parameters

• Chemical name: tetrakis(thylenediammonium) gallium trivanadium octakis(hydrogen sulfate) tetrahydroxide tetrahydrate
• Formula: C8 H52 Ga N8 O40 S8 V3
• Calculated formula: C8 H52 Ga N8 O40 S8 V3
• Title of publication: Ethylenediammonium gallic vanadium hydrogen sulfate monohydrate
• Authors of publication: Xiao-Chang Sun; Guang-Peng Zhou; Xue-Fang Zheng; Yan Xu
• Journal of publication: Acta Crystallographica Section E
• Year of publication: 2007
• Journal volume: 63
• Journal issue: 5
• Pages of publication: m1388 - m1390
• a: 6.9044 ± 0.0001 Å
• b: 10.3038 ± 0.0002 Å
• c: 15.0875 ± 0.0003 Å
• α: 90°
• β: 90.847 ± 0.001°
• γ: 90°
• Cell volume: 1073.23 ± 0.03 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 7
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0474
• Residual factor for significantly intense reflections: 0.036
• Weighted residual factors for significantly intense reflections: 0.0922
• Weighted residual factors for all reflections included in the refinement: 0.0982
• Goodness-of-fit parameter for all reflections included in the refinement: 1.047
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: Yes