Information card for entry 2223168
| Chemical name |
1,1,2,2-Tetrakis(di-<i>o</i>-tolylphosphino)ethane |
| Formula |
C58 H58 P4 |
| Calculated formula |
C58 H58 P4 |
| SMILES |
Cc1ccccc1P(C(P(c1ccccc1C)c1ccccc1C)C(P(c1ccccc1C)c1ccccc1C)P(c1ccccc1C)c1ccccc1C)c1ccccc1C |
| Title of publication |
1,1,2,2-Tetrakis(di-<i>o</i>-tolylphosphino)ethane |
| Authors of publication |
Sisler, Elizabeth M.; Arias, Karla; Gray, Danielle L.; Shelby, Quinetta D. |
| Journal of publication |
Acta Crystallographica Section E |
| Year of publication |
2009 |
| Journal volume |
65 |
| Journal issue |
9 |
| Pages of publication |
o2231 |
| a |
21.8875 ± 0.0011 Å |
| b |
10.9702 ± 0.0006 Å |
| c |
19.691 ± 0.001 Å |
| α |
90° |
| β |
90.761 ± 0.003° |
| γ |
90° |
| Cell volume |
4727.6 ± 0.4 Å3 |
| Cell temperature |
193 ± 2 K |
| Ambient diffraction temperature |
193 ± 2 K |
| Number of distinct elements |
3 |
| Space group number |
15 |
| Hermann-Mauguin space group symbol |
C 1 2/c 1 |
| Hall space group symbol |
-C 2yc |
| Residual factor for all reflections |
0.0582 |
| Residual factor for significantly intense reflections |
0.0392 |
| Weighted residual factors for significantly intense reflections |
0.0916 |
| Weighted residual factors for all reflections included in the refinement |
0.1021 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.01 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
Yes |
For the version history of this entry, please navigate to main COD server.
The link is:
https://www.crystallography.net/2223168.html