Information card for entry 2231635
Chemical name |
<i>cis</i>-[1,2-Bis(diphenylarsanyl)ethane- κ^2^<i>As</i>,<i>As</i>']tetracarbonylchromium(0) |
Formula |
C30 H24 As2 Cr O4 |
Calculated formula |
C30 H24 As2 Cr O4 |
SMILES |
[As]1([Cr]([As](CC1)(c1ccccc1)c1ccccc1)(C#[O])(C#[O])(C#[O])C#[O])(c1ccccc1)c1ccccc1 |
Title of publication |
<i>cis</i>-[1,2-Bis(diphenylarsanyl)ethane-κ^2^<i>As</i>,<i>As</i>']tetracarbonylchromium(0) |
Authors of publication |
Norlidah, M. N.; Azhar, M. Y.; Bin Shawkataly, Omar; Rosli, Mohd Mustaqim; Fun, Hoong-Kun |
Journal of publication |
Acta Crystallographica Section E |
Year of publication |
2011 |
Journal volume |
67 |
Journal issue |
9 |
Pages of publication |
m1267 - m1268 |
a |
17.0231 ± 0.0004 Å |
b |
12.62 ± 0.0003 Å |
c |
25.5527 ± 0.0006 Å |
α |
90° |
β |
90° |
γ |
90° |
Cell volume |
5489.5 ± 0.2 Å3 |
Cell temperature |
100 K |
Ambient diffraction temperature |
100 K |
Number of distinct elements |
5 |
Space group number |
61 |
Hermann-Mauguin space group symbol |
P b c a |
Hall space group symbol |
-P 2ac 2ab |
Residual factor for all reflections |
0.0443 |
Residual factor for significantly intense reflections |
0.0279 |
Weighted residual factors for significantly intense reflections |
0.0581 |
Weighted residual factors for all reflections included in the refinement |
0.0645 |
Goodness-of-fit parameter for all reflections included in the refinement |
1.018 |
Diffraction radiation wavelength |
0.71073 Å |
Diffraction radiation type |
MoKα |
Has coordinates |
Yes |
Has disorder |
No |
Has Fobs |
Yes |
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https://www.crystallography.net/2231635.html