Information card for entry 2235576
| Chemical name |
<i>N</i>,<i>N</i>'-{[Ethane-1,2-diylbis(oxy)]bis(ethane-2,1-diyl)}bis(4- methylbenzenesulfonamide) |
| Formula |
C20 H28 N2 O6 S2 |
| Calculated formula |
C20 H28 N2 O6 S2 |
| SMILES |
Cc1ccc(cc1)S(=O)(=O)NCCOCCOCCNS(=O)(=O)c1ccc(cc1)C |
| Title of publication |
<i>N</i>,<i>N</i>'-{[Ethane-1,2-diylbis(oxy)]bis(ethane-2,1-diyl)}bis(4-methylbenzenesulfonamide) |
| Authors of publication |
Al-Mohammed, Nassir N.; Alias, Yatimah; Abdullah, Zanariah; Khaledi, Hamid |
| Journal of publication |
Acta Crystallographica Section E |
| Year of publication |
2012 |
| Journal volume |
68 |
| Journal issue |
7 |
| Pages of publication |
o1983 |
| a |
11.135 ± 0.007 Å |
| b |
9.22 ± 0.006 Å |
| c |
21.452 ± 0.015 Å |
| α |
90° |
| β |
93.68 ± 0.012° |
| γ |
90° |
| Cell volume |
2198 ± 3 Å3 |
| Cell temperature |
296 ± 2 K |
| Ambient diffraction temperature |
296 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
15 |
| Hermann-Mauguin space group symbol |
C 1 2/c 1 |
| Hall space group symbol |
-C 2yc |
| Residual factor for all reflections |
0.0679 |
| Residual factor for significantly intense reflections |
0.0533 |
| Weighted residual factors for significantly intense reflections |
0.139 |
| Weighted residual factors for all reflections included in the refinement |
0.1504 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.033 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
Yes |
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https://www.crystallography.net/2235576.html