Information card for entry 2242516
| Common name |
6-(Phenylsulfonyl)-6H-thieno[3,2-c]carbazole |
| Chemical name |
6-Phenylsulfonyl-6<i>H</i>-thieno[3,2-<i>c</i>]carbazole |
| Formula |
C20 H13 N O2 S2 |
| Calculated formula |
C20 H13 N O2 S2 |
| SMILES |
c1cccc2c1n(c1c2c2c(cc1)ccs2)S(=O)(=O)c1ccccc1 |
| Title of publication |
Crystal structure determination, Hirshfeld surface analysis and energy frameworks of 6-phenylsulfonyl-6<i>H</i>-thieno[3,2-<i>c</i>]carbazole |
| Authors of publication |
Mohamooda Sumaya, U.; Sankar, E.; Arasambattu MohanaKrishnan, K.; Biruntha, K.; Usha, G. |
| Journal of publication |
Acta Crystallographica Section E |
| Year of publication |
2018 |
| Journal volume |
74 |
| Journal issue |
7 |
| Pages of publication |
878 - 883 |
| a |
7.6461 ± 0.0008 Å |
| b |
9.8772 ± 0.0009 Å |
| c |
11.2191 ± 0.0012 Å |
| α |
72.571 ± 0.005° |
| β |
88.496 ± 0.006° |
| γ |
86.144 ± 0.006° |
| Cell volume |
806.54 ± 0.14 Å3 |
| Cell temperature |
298 ± 2 K |
| Ambient diffraction temperature |
298 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.0486 |
| Residual factor for significantly intense reflections |
0.034 |
| Weighted residual factors for significantly intense reflections |
0.0797 |
| Weighted residual factors for all reflections included in the refinement |
0.0908 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.031 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
Yes |
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The link is:
https://www.crystallography.net/2242516.html