Information card for entry 2300370

Structure parameters

• Formula: O2 Si
• Calculated formula: O2 Si
• Title of publication: Modulation of quartz-like GeO~2~ structure by Si substitution: an X-ray diffraction study of Ge~1{-~<i>x</i>}Si<i>~x~</i>O~2~ (0 {łeq} <i>x</i> < 0.2) flux-grown single crystals
• Authors of publication: Lignie, Adrien; Granier, Dominique; Armand, Pascale; Haines, Julien; Papet, Philippe
• Journal of publication: Journal of Applied Crystallography
• Year of publication: 2012
• Journal volume: 45
• Journal issue: 2
• Pages of publication: 272 - 278
• a: 4.91636 ± 0.00019 Å
• b: 4.91636 ± 0.00018 Å
• c: 5.4084 ± 0.0002 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 113.211 ± 0.007 ų
• Cell temperature: 298 ± 2 K
• Ambient diffraction temperature: 298 ± 2 K
• Number of distinct elements: 2
• Space group number: 154
• Hermann-Mauguin space group symbol: P 32 2 1
• Hall space group symbol: P 32 2"
• Residual factor for all reflections: 0.0132
• Residual factor for significantly intense reflections: 0.0131
• Weighted residual factors for significantly intense reflections: 0.0401
• Weighted residual factors for all reflections included in the refinement: 0.0402
• Goodness-of-fit parameter for all reflections included in the refinement: 1.253
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No