Information card for entry 2312498

Structure parameters

• Formula: Ge4 N4 O4 Sn
• Calculated formula: Ge4 N4 O4 Sn
• Title of publication: Crystal structures of two new high-pressure oxynitrides with composition SnGe₄N₄O₄, from single-crystal electron diffraction.
• Authors of publication: Gollé-Leidreiter, Philipp; Bhat, Shrikant; Wiehl, Leonore; Wen, Qingbo; Kroll, Peter; Ishikawa, Ryo; Etter, Martin; Farla, Robert; Ikuhara, Yuichi; Riedel, Ralf; Kolb, Ute
• Journal of publication: Acta crystallographica Section B, Structural science, crystal engineering and materials
• Year of publication: 2024
• Journal volume: 80
• Journal issue: 3
• a: 5.876 ± 0.003 Å
• b: 5.876 ± 0.003 Å
• c: 9.418 ± 0.005 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 281.6 ± 0.3 ų
• Cell temperature: 293 K
• Ambient diffraction temperature: 293 K
• Number of distinct elements: 4
• Space group number: 186
• Hermann-Mauguin space group symbol: P 63 m c
• Hall space group symbol: P 6c -2c
• Residual factor for all reflections: 0.1001
• Residual factor for significantly intense reflections: 0.0942
• Weighted residual factors for significantly intense reflections: 0.1053
• Weighted residual factors for all reflections included in the refinement: 0.1064
• Goodness-of-fit parameter for significantly intense reflections: 3.5927
• Goodness-of-fit parameter for all reflections included in the refinement: 3.3713
• Diffraction radiation probe: electron
• Diffraction radiation wavelength: 0.0197 Å
• Diffraction radiation type: electron
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No