Information card for entry 4000050

Structure parameters

• Formula: C36 H84 Ga4 O12
• Calculated formula: C36 H84 Ga4 O12
• SMILES: CC([O]1[Ga]23([O]([Ga]1(OC(C)C)OC(C)C)C(C)C)([O](C(C)C)[Ga]([O]2C(C)C)(OC(C)C)OC(C)C)[O](C(C)C)[Ga]([O]3C(C)C)(OC(C)C)OC(C)C)C
• Title of publication: Synthesis of Homoleptic Gallium Alkoxide Complexes and the Chemical Vapor Deposition of Gallium Oxide Films
• Authors of publication: Valet, Murielle; Hoffman, David M.
• Journal of publication: Chemistry of Materials
• Year of publication: 2001
• Journal volume: 13
• Journal issue: 6
• Pages of publication: 2135 - 2143
• a: 12.5566 ± 0.0006 Å
• b: 12.5566 ± 0.0006 Å
• c: 32.0324 ± 0.0017 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 5050.5 ± 0.4 ų
• Cell temperature: 223 ± 2 K
• Ambient diffraction temperature: 223 ± 2 K
• Number of distinct elements: 4
• Space group number: 92
• Hermann-Mauguin space group symbol: P 41 21 2
• Hall space group symbol: P 4abw 2nw
• Residual factor for all reflections: 0.0353
• Residual factor for significantly intense reflections: 0.028
• Weighted residual factors for significantly intense reflections: 0.0704
• Weighted residual factors for all reflections included in the refinement: 0.0759
• Goodness-of-fit parameter for all reflections included in the refinement: 1.06
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No