Information card for entry 4000052

Structure parameters

• Formula: C14 H34 Ga N O3
• Calculated formula: C14 H34 Ga N O3
• SMILES: C[NH]([Ga](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C)C
• Title of publication: Synthesis of Homoleptic Gallium Alkoxide Complexes and the Chemical Vapor Deposition of Gallium Oxide Films
• Authors of publication: Valet, Murielle; Hoffman, David M.
• Journal of publication: Chemistry of Materials
• Year of publication: 2001
• Journal volume: 13
• Journal issue: 6
• Pages of publication: 2135 - 2143
• a: 10.1444 ± 0.0008 Å
• b: 12.8117 ± 0.001 Å
• c: 14.4492 ± 0.0011 Å
• α: 90°
• β: 92.085 ± 0.001°
• γ: 90°
• Cell volume: 1876.7 ± 0.3 ų
• Cell temperature: 223 ± 2 K
• Ambient diffraction temperature: 223 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0461
• Residual factor for significantly intense reflections: 0.0253
• Weighted residual factors for significantly intense reflections: 0.0598
• Weighted residual factors for all reflections included in the refinement: 0.0663
• Goodness-of-fit parameter for all reflections included in the refinement: 0.962
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No