Information card for entry 4000141

Structure parameters

• Formula: C32 H72 O10 Si2 V
• Calculated formula: C32 H72 O10 Si2 V
• SMILES: CC(O[V](O[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C)(O[Si](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C)OC(C)(C)C)(C)C
• Journal of publication: Chemistry of Materials
• Year of publication: 2002
• a: 9.616 ± 0.002 Å
• b: 16.597 ± 0.003 Å
• c: 27.803 ± 0.006 Å
• α: 90°
• β: 96.78 ± 0.03°
• γ: 90°
• Cell volume: 4406.2 ± 1.5 ų
• Cell temperature: 161 ± 2 K
• Ambient diffraction temperature: 161 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.1216
• Residual factor for significantly intense reflections: 0.047
• Weighted residual factors for all reflections: 0.1082
• Weighted residual factors for significantly intense reflections: 0.0957
• Goodness-of-fit parameter for all reflections: 0.78
• Goodness-of-fit parameter for significantly intense reflections: 1.058
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No