Information card for entry 4000178

Structure parameters

• Formula: Ga5.94 Ni2 Si0.06 Sm0.67
• Calculated formula: Ga5.934 Ni2 Si0.06 Sm0.67
• Journal of publication: Chemistry of Materials
• Year of publication: 2002
• a: 4.1976 ± 0.0008 Å
• b: 4.1976 ± 0.0008 Å
• c: 9.159 ± 0.003 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 139.76 ± 0.05 ų
• Cell temperature: 571 ± 2 K
• Ambient diffraction temperature: 571 ± 2 K
• Number of distinct elements: 4
• Space group number: 187
• Hermann-Mauguin space group symbol: P -6 m 2
• Hall space group symbol: P -6 2
• Residual factor for all reflections: 0.0234
• Residual factor for significantly intense reflections: 0.0233
• Weighted residual factors for significantly intense reflections: 0.0497
• Weighted residual factors for all reflections included in the refinement: 0.0497
• Goodness-of-fit parameter for all reflections included in the refinement: 1.093
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No