Information card for entry 4000326

Structure parameters

• Chemical name: Gallium manganese nitride (0.9525/0.0475/1)
• Formula: Ga0.95 Mn0.05 N
• Calculated formula: Ga0.95 Mn0.05 N
• Journal of publication: Chemistry of Materials
• Year of publication: 2003
• a: 3.1968 ± 0.0005 Å
• b: 3.1968 ± 0.0005 Å
• c: 5.1901 ± 0.001 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 45.934 ± 0.013 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 3
• Space group number: 186
• Hermann-Mauguin space group symbol: P 63 m c
• Hall space group symbol: P 6c -2c
• Residual factor for all reflections: 0.0217
• Residual factor for significantly intense reflections: 0.0203
• Weighted residual factors for significantly intense reflections: 0.04
• Weighted residual factors for all reflections included in the refinement: 0.0409
• Goodness-of-fit parameter for all reflections included in the refinement: 1.358
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No