Information card for entry 4000752

Structure parameters

• Formula: Ga Se2 Ta4 Te6
• Calculated formula: Ga Se2 Ta4 Te6
• Title of publication: Control of the Electronic Properties and Resistive Switching in the New Series of Mott Insulators GaTa4Se8‒yTey(0 ≤y≤ 6.5)
• Authors of publication: Guiot, V.; Janod, E.; Corraze, B.; Cario, L.
• Journal of publication: Chemistry of Materials
• Year of publication: 2011
• Journal volume: 23
• Journal issue: 10
• Pages of publication: 2611
• a: 10.9955 ± 0.0013 Å
• b: 10.9955 ± 0.0013 Å
• c: 10.9955 ± 0.0013 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 1329.4 ± 0.3 ų
• Cell temperature: 295 K
• Ambient diffraction temperature: 295 K
• Number of distinct elements: 4
• Space group number: 216
• Hermann-Mauguin space group symbol: F -4 3 m
• Hall space group symbol: F -4 2 3
• Residual factor for all reflections: 0.0479
• Residual factor for significantly intense reflections: 0.0475
• Weighted residual factors for significantly intense reflections: 0.0519
• Weighted residual factors for all reflections included in the refinement: 0.0521
• Goodness-of-fit parameter for significantly intense reflections: 1.16
• Goodness-of-fit parameter for all reflections included in the refinement: 1.15
• Diffraction radiation wavelength: 0.71069 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No