Information card for entry 4000778

Structure parameters

• Chemical name: Gallium chromium vanadium selenide (1/3/1/8)
• Formula: Cr3 Ga Se8 V
• Calculated formula: Cr3 Ga Se8 V
• Title of publication: Interplay of Magnetism and Bonding in GaV4‒xCrxSe8
• Authors of publication: Bichler, Daniel; Johrendt, Dirk
• Journal of publication: Chemistry of Materials
• Year of publication: 2011
• Journal volume: 23
• Journal issue: 11
• Pages of publication: 3014
• a: 10.236 ± 0.002 Å
• b: 10.236 ± 0.002 Å
• c: 10.236 ± 0.002 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 1072.5 ± 0.4 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 4
• Space group number: 216
• Hermann-Mauguin space group symbol: F -4 3 m
• Hall space group symbol: F -4 2 3
• Residual factor for all reflections: 0.0516
• Residual factor for significantly intense reflections: 0.0315
• Weighted residual factors for significantly intense reflections: 0.0568
• Weighted residual factors for all reflections included in the refinement: 0.06
• Goodness-of-fit parameter for all reflections included in the refinement: 0.813
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No