Information card for entry 4000819
Formula |
Hg3 Te4 Tl2 |
Calculated formula |
Hg3 Te4 Tl2 |
Title of publication |
Tl2Hg3Q4(Q = S, Se, and Te): High-Density, Wide-Band-Gap Semiconductors |
Authors of publication |
Johnsen, Simon; Peter, Sebastian C.; Nguyen, Sandy L.; Song, Jung-Hwan; Jin, Hosub; Freeman, Arthur J.; Kanatzidis, Mercouri G. |
Journal of publication |
Chemistry of Materials |
Year of publication |
2011 |
Journal volume |
23 |
Journal issue |
19 |
Pages of publication |
4375 |
a |
12.648 ± 0.003 Å |
b |
7.3574 ± 0.0015 Å |
c |
13.701 ± 0.003 Å |
α |
90° |
β |
117.48 ± 0.03° |
γ |
90° |
Cell volume |
1131.1 ± 0.5 Å3 |
Cell temperature |
293 ± 2 K |
Ambient diffraction temperature |
293 ± 2 K |
Number of distinct elements |
3 |
Space group number |
15 |
Hermann-Mauguin space group symbol |
C 1 2/c 1 |
Hall space group symbol |
-C 2yc |
Residual factor for all reflections |
0.0731 |
Residual factor for significantly intense reflections |
0.0513 |
Weighted residual factors for significantly intense reflections |
0.0973 |
Weighted residual factors for all reflections included in the refinement |
0.1032 |
Goodness-of-fit parameter for all reflections included in the refinement |
1.1 |
Diffraction radiation wavelength |
0.71073 Å |
Diffraction radiation type |
MoKα |
Has coordinates |
Yes |
Has disorder |
No |
Has Fobs |
No |
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https://www.crystallography.net/4000819.html