Information card for entry 4000885

Structure parameters

• Formula: C12 H24 Cl4 Co N6 S4
• Calculated formula: C12 H24 Cl4 Co N6 S4
• SMILES: CN(C)C1=NC(SS1)=[N+](C)C.CN(C)C1=NC(SS1)=[N+](C)C.[Co](Cl)(Cl)([Cl-])[Cl-]
• Title of publication: Selective Deposition of Cobalt Sulfide Nanostructured Thin Films from Single-Source Precursors
• Authors of publication: Ramasamy, Karthik; Malik, Mohammad A.; Raftery, James; Tuna, Floriana; O’Brien, Paul
• Journal of publication: Chemistry of Materials
• Year of publication: 2010
• Journal volume: 22
• Journal issue: 17
• Pages of publication: 4919
• a: 13.978 ± 0.002 Å
• b: 9.226 ± 0.0015 Å
• c: 18.155 ± 0.003 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 2341.3 ± 0.6 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 29
• Hermann-Mauguin space group symbol: P c a 21
• Hall space group symbol: P 2c -2ac
• Residual factor for all reflections: 0.0421
• Residual factor for significantly intense reflections: 0.0354
• Weighted residual factors for significantly intense reflections: 0.0635
• Weighted residual factors for all reflections included in the refinement: 0.0655
• Goodness-of-fit parameter for all reflections included in the refinement: 1.022
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No