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Information card for entry 4000914
Preview
Coordinates | 4000914.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C20 H40 N6 Ni S4 |
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Calculated formula | C20 H40 N6 Ni S4 |
SMILES | CCN(C1=NC(=[S][Ni]2(S1)SC(=NC(=[S]2)N(CC)CC)N(CC)CC)N(CC)CC)CC |
Title of publication | Nickel Sulfide Thin Films from Thio- and Dithiobiuret Precursors |
Authors of publication | Ramasamy, Karthik; Malik, Mohammad A.; O’Brien, Paul; Raftery, James; Helliwell, Madeleine |
Journal of publication | Chemistry of Materials |
Year of publication | 2010 |
Journal volume | 22 |
Journal issue | 23 |
Pages of publication | 6328 |
a | 9.4941 ± 0.0015 Å |
b | 11.4556 ± 0.0017 Å |
c | 13.758 ± 0.002 Å |
α | 89.628 ± 0.003° |
β | 89.726 ± 0.003° |
γ | 67.548 ± 0.003° |
Cell volume | 1382.9 ± 0.4 Å3 |
Cell temperature | 100 ± 2 K |
Ambient diffraction temperature | 100 ± 2 K |
Number of distinct elements | 5 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.0651 |
Residual factor for significantly intense reflections | 0.0477 |
Weighted residual factors for significantly intense reflections | 0.0991 |
Weighted residual factors for all reflections included in the refinement | 0.1037 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.112 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4000914.html
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