Information card for entry 4001061

Structure parameters

• Formula: C34 H24 S2
• Calculated formula: C34 H24 S2
• SMILES: c1ccc(cc1)C1=CC(=C2C=C(SC(=C2)c2ccccc2)c2ccccc2)C=C(S1)c1ccccc1
• Title of publication: Field-Effect Transistors Based on Tetraphenyldipyranylidenes and the Sulfur Analogues
• Authors of publication: Bolag, Altan; Mamada, Masashi; Nishida, Jun-ichi; Yamashita, Yoshiro
• Journal of publication: Chemistry of Materials
• Year of publication: 2009
• Journal volume: 21
• Journal issue: 19
• Pages of publication: 4350
• a: 27.808 ± 0.003 Å
• b: 5.5222 ± 0.0004 Å
• c: 17.8631 ± 0.0012 Å
• α: 90°
• β: 117.876 ± 0.004°
• γ: 90°
• Cell volume: 2424.8 ± 0.4 ų
• Cell temperature: 93.1 K
• Number of distinct elements: 3
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for significantly intense reflections: 0.0418
• Weighted residual factors for all reflections included in the refinement: 0.124
• Goodness-of-fit parameter for all reflections included in the refinement: 1.116
• Diffraction radiation wavelength: 0.71075 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No