Information card for entry 4001253

Structure parameters

• Formula: As5 Ba2 In5
• Calculated formula: As5 Ba2 In5
• Title of publication: Flux Growth and Electronic Properties of Ba2In5Pn5(Pn = P, As): Zintl Phases Exhibiting Metallic Behavior
• Authors of publication: Mathieu, Josiah; Achey, Randall; Park, Ju-Hyun; Purcell, Kenneth M.; Tozer, Stanley W.; Latturner, Susan E.
• Journal of publication: Chemistry of Materials
• Year of publication: 2008
• Journal volume: 20
• Journal issue: 17
• Pages of publication: 5675
• a: 17.4609 ± 0.0015 Å
• b: 4.2905 ± 0.0004 Å
• c: 17.9614 ± 0.0015 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 1345.6 ± 0.2 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 3
• Space group number: 62
• Hermann-Mauguin space group symbol: P n m a
• Hall space group symbol: -P 2ac 2n
• Residual factor for all reflections: 0.0404
• Residual factor for significantly intense reflections: 0.039
• Weighted residual factors for significantly intense reflections: 0.0844
• Weighted residual factors for all reflections included in the refinement: 0.085
• Goodness-of-fit parameter for all reflections included in the refinement: 1.347
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No