Information card for entry 4001316

Structure parameters

• Formula: Ga0.96 Mn0.04 N
• Calculated formula: Ga0.96 Mn0.04 N
• Title of publication: New Chemical Method of Obtaining Thick Ga1-xMnxN Layers: Prospective Spintronic Material
• Authors of publication: Kaminski, Michal; Podsiadlo, Slawomir; Dominik, Pawel; Wozniak, Krzysztof; Dobrzycki, Lukasz; Jakiela, Rafal; Barcz, Adam; Psoda, Marek; Mizera, Jaroslaw; Bacewicz, Rajmund; Zajac, Marcin; Twardowski, Andrzej
• Journal of publication: Chemistry of Materials
• Year of publication: 2007
• Journal volume: 19
• Journal issue: 13
• Pages of publication: 3139
• a: 3.1932 ± 0.0015 Å
• b: 3.1932 ± 0.0015 Å
• c: 5.185 ± 0.003 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 45.79 ± 0.04 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 3
• Space group number: 186
• Hermann-Mauguin space group symbol: P 63 m c
• Hall space group symbol: P 6c -2c
• Residual factor for all reflections: 0.0111
• Residual factor for significantly intense reflections: 0.0084
• Weighted residual factors for significantly intense reflections: 0.0198
• Weighted residual factors for all reflections included in the refinement: 0.0201
• Goodness-of-fit parameter for all reflections included in the refinement: 1.32
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No