Information card for entry 4001490

Structure parameters

• Formula: C38 H22 Ga I4 N6 S12 Se4
• Calculated formula: C38 H22 Ga I4 N6 S12 Se4
• SMILES: IC1=C(I)SC(=C2[Se]C3=C([Se]2)SCCS3)S1.IC1=C(I)SC(=C2[Se]C3=C([Se]2)SCCS3)S1.S=C=N[Ga]([n]1ccc2c(c1)cccc2)([n]1ccc2c(c1)cccc2)(N=C=S)(N=C=S)N=C=S
• Title of publication: Iodine Substituted Tetrathiafulvalene Radical Cation Salts with [M(isoq)2(NCS)4]-Anions where M = CrIII, GaIII: Role of I···S and S···S Contacts on Structural and Magnetic Properties
• Authors of publication: Hervé, Katel; Cador, Olivier; Golhen, Stéphane; Costuas, Karine; Halet, Jean-François; Shirahata, Takashi; Muto, Tsuyoshi; Imakubo, Tatsuro; Miyazaki, Akira; Ouahab, Lahcène
• Journal of publication: Chemistry of Materials
• Year of publication: 2006
• Journal volume: 18
• Journal issue: 3
• Pages of publication: 790
• a: 10.719 ± 0.0003 Å
• b: 11.41 ± 0.0003 Å
• c: 11.433 ± 0.0003 Å
• α: 100.894 ± 0.001°
• β: 97.014 ± 0.001°
• γ: 99.116 ± 0.001°
• Cell volume: 1338.98 ± 0.06 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 7
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0684
• Residual factor for significantly intense reflections: 0.0522
• Weighted residual factors for significantly intense reflections: 0.1448
• Weighted residual factors for all reflections included in the refinement: 0.1579
• Goodness-of-fit parameter for all reflections included in the refinement: 1.051
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No