Information card for entry 4001713

Structure parameters

• Formula: C28 H42 N2 S4 Sn
• Calculated formula: C28 H42 N2 S4 Sn
• SMILES: CCCCCCN(C(=S)S[Sn](c1ccccc1)(c1ccccc1)SC(N(CCCCCC)C)=S)C
• Title of publication: Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)
• Authors of publication: Ramasamy, Karthik; Kuznetsov, Vladimir L.; Gopal, Kandasamy; Malik, Mohammad A.; Raftery, James; Edwards, Peter P.; O'Brien, Paul
• Journal of publication: Chemistry of Materials
• Year of publication: 2013
• Journal volume: 25
• Journal issue: 3
• Pages of publication: 266 - 276
• a: 27.282 ± 0.0009 Å
• b: 17.7669 ± 0.0006 Å
• c: 18.6716 ± 0.0006 Å
• α: 90°
• β: 96.77 ± 0.003°
• γ: 90°
• Cell volume: 8987.3 ± 0.5 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0447
• Residual factor for significantly intense reflections: 0.0339
• Weighted residual factors for significantly intense reflections: 0.0821
• Weighted residual factors for all reflections included in the refinement: 0.0857
• Goodness-of-fit parameter for all reflections included in the refinement: 1.054
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No