Information card for entry 4001866

Structure parameters

• Formula: Ga3 Ho Mn0.152
• Calculated formula: Ga3 Ho Mn0.152
• Title of publication: Filling in the Holes: Structural and Magnetic Properties of the Chemical Pressure Stabilized LnMnxGa3(Ln = Ho‒Tm;x< 0.15)
• Authors of publication: Fulfer, Bradford W.; McAlpin, Jacob D.; Engelkemier, Joshua; McCandless, Gregory T.; Prestigiacomo, Joseph; Stadler, Shane; Fredrickson, Daniel C.; Chan, Julia Y.
• Journal of publication: Chemistry of Materials
• Year of publication: 2014
• Journal volume: 26
• Journal issue: 2
• Pages of publication: 1170
• a: 4.2516 ± 0.0001 Å
• b: 4.2516 ± 0.0001 Å
• c: 4.2516 ± 0.0001 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 76.852 ± 0.003 ų
• Cell temperature: 293 K
• Ambient diffraction temperature: 293 K
• Number of distinct elements: 3
• Space group number: 221
• Hermann-Mauguin space group symbol: P m -3 m
• Hall space group symbol: -P 4 2 3
• Residual factor for all reflections: 0.0114
• Residual factor for significantly intense reflections: 0.0114
• Weighted residual factors for significantly intense reflections: 0.0129
• Weighted residual factors for all reflections included in the refinement: 0.0129
• Goodness-of-fit parameter for significantly intense reflections: 1.28
• Goodness-of-fit parameter for all reflections included in the refinement: 1.28
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No