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Information card for entry 4001950
Preview
| Coordinates | 4001950.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Common name | 10132 |
|---|---|
| Formula | C46 H36 |
| Calculated formula | C46 H36 |
| SMILES | Cc1ccc(cc1)c1c2ccccc2c(c2c1c(c1ccc(cc1)C)c1ccccc1c2c1ccc(cc1)C)c1ccc(cc1)C |
| Title of publication | Rubrene-Based Single-Crystal Organic Semiconductors: Synthesis, Electronic Structure, and Charge-Transport Properties |
| Authors of publication | McGarry, Kathryn A.; Xie, Wei; Sutton, Christopher; Risko, Chad; Wu, Yanfei; Young, Victor G.; Brédas, Jean-Luc; Frisbie, C. Daniel; Douglas, Christopher J. |
| Journal of publication | Chemistry of Materials |
| Year of publication | 2013 |
| Journal volume | 25 |
| Journal issue | 11 |
| Pages of publication | 2254 |
| a | 41.257 ± 0.006 Å |
| b | 10.1464 ± 0.0014 Å |
| c | 24.038 ± 0.004 Å |
| α | 90° |
| β | 96.739 ± 0.004° |
| γ | 90° |
| Cell volume | 9993 ± 3 Å3 |
| Cell temperature | 173 ± 2 K |
| Ambient diffraction temperature | 173 ± 2 K |
| Number of distinct elements | 2 |
| Space group number | 15 |
| Hermann-Mauguin space group symbol | C 1 2/c 1 |
| Hall space group symbol | -C 2yc |
| Residual factor for all reflections | 0.0919 |
| Residual factor for significantly intense reflections | 0.0475 |
| Weighted residual factors for significantly intense reflections | 0.097 |
| Weighted residual factors for all reflections included in the refinement | 0.1131 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.017 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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