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Information card for entry 4002005
Preview
Coordinates | 4002005.cif |
---|---|
Original paper (by DOI) | HTML |
Common name | Bis(N-n-cetylpyrrolo[3,4-d])TTF |
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Formula | C42 H70 N2 S4 |
Calculated formula | C42 H70 N2 S4 |
SMILES | CCCCCCCCCCCCCCCCn1cc2c(c1)SC(=C1Sc3c(S1)cn(c3)CCCCCCCCCCCCCCCC)S2 |
Title of publication | Development ofN-Alkyl-Substituted Bis(pyrrolo[3,4-d])tetrathiafulvalenes as Organic Semiconductors for Solution-Processible Field-Effect Transistors |
Authors of publication | Doi, Iori; Miyazaki, Eigo; Takimiya, Kazuo; Kunugi, Yoshihito |
Journal of publication | Chemistry of Materials |
Year of publication | 2007 |
Journal volume | 19 |
Journal issue | 22 |
Pages of publication | 5230 |
a | 5.394 ± 0.003 Å |
b | 7.502 ± 0.003 Å |
c | 26.92 ± 0.002 Å |
α | 92.34 ± 0.02° |
β | 94.06 ± 0.02° |
γ | 103.68 ± 0.02° |
Cell volume | 1053.9 ± 0.7 Å3 |
Cell temperature | 200 ± 2 K |
Ambient diffraction temperature | 200 ± 2 K |
Number of distinct elements | 4 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.0852 |
Residual factor for significantly intense reflections | 0.0564 |
Weighted residual factors for significantly intense reflections | 0.1556 |
Weighted residual factors for all reflections included in the refinement | 0.1777 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.928 |
Diffraction radiation wavelength | 0.71069 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4002005.html
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