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Information card for entry 4002034
Preview
| Coordinates | 4002034.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | H22 N4 O3 S6 Sn2 |
|---|---|
| Calculated formula | H22 N4 O3 S6 Sn2 |
| SMILES | [NH4+].[NH4+].O.O.[S-][Sn]1(S[Sn](S1)([S-])[S-])[S-].[NH4+].[NH4+].O |
| Title of publication | (NH4)4Sn2S6·3H2O: Crystal Structure, Thermal Decomposition, and Precursor for Textured Thin Film |
| Authors of publication | Nørby, Peter; Overgaard, Jacob; Christensen, Per S.; Richter, Bo; Song, Xin; Dong, Mingdong; Han, Anpan; Skibsted, Jørgen; Iversen, Bo B.; Johnsen, Simon |
| Journal of publication | Chemistry of Materials |
| Year of publication | 2014 |
| Journal volume | 26 |
| Journal issue | 15 |
| Pages of publication | 4494 |
| a | 8.56294 ± 0.00008 Å |
| b | 8.56294 ± 0.00008 Å |
| c | 22.7703 ± 0.0003 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 1669.61 ± 0.03 Å3 |
| Cell temperature | 99.99 ± 0.1 K |
| Ambient diffraction temperature | 99.97 ± 0.11 K |
| Number of distinct elements | 5 |
| Space group number | 92 |
| Hermann-Mauguin space group symbol | P 41 21 2 |
| Hall space group symbol | P 4abw 2nw |
| Residual factor for all reflections | 0.0185 |
| Residual factor for significantly intense reflections | 0.0162 |
| Weighted residual factors for significantly intense reflections | 0.0313 |
| Weighted residual factors for all reflections included in the refinement | 0.0322 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.077 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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