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Information card for entry 4003018
Preview
Coordinates | 4003018.cif |
---|---|
Original paper (by DOI) | HTML |
Common name | Organic compound |
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Formula | C28 H6 F10 O2 S2 |
Calculated formula | C28 H6 F10 O2 S2 |
SMILES | c1(c(c(c(c(c1F)F)F)F)F)C(=O)c1cc2c(cc1)c1sc3cc(ccc3c1s2)C(=O)c1c(c(c(c(c1F)F)F)F)F |
Title of publication | High Electron Mobility in [1]Benzothieno[3,2-b][1]benzothiophene-Based Field-Effect Transistors: Toward n-Type BTBTs |
Authors of publication | Usta, Hakan; Kim, Dojeon; Ozdemir, Resul; Zorlu, Yunus; Kim, Sanghyo; Ruiz Delgado, M. Carmen; Harbuzaru, Alexandra; Kim, Seonhyoung; Demirel, Gökhan; Hong, Jongin; Ha, Young-Geun; Cho, Kilwon; Facchetti, Antonio; Kim, Myung-Gil |
Journal of publication | Chemistry of Materials |
Year of publication | 2019 |
Journal volume | 31 |
Journal issue | 14 |
Pages of publication | 5254 |
a | 43.611 ± 0.003 Å |
b | 7.3973 ± 0.0005 Å |
c | 7.1455 ± 0.0005 Å |
α | 90° |
β | 96.283 ± 0.004° |
γ | 90° |
Cell volume | 2291.3 ± 0.3 Å3 |
Cell temperature | 293 ± 2 K |
Ambient diffraction temperature | 293 ± 2 K |
Number of distinct elements | 5 |
Space group number | 15 |
Hermann-Mauguin space group symbol | C 1 2/c 1 |
Hall space group symbol | -C 2yc |
Residual factor for all reflections | 0.0488 |
Residual factor for significantly intense reflections | 0.0391 |
Weighted residual factors for significantly intense reflections | 0.0986 |
Weighted residual factors for all reflections included in the refinement | 0.104 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.035 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4003018.html
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Users of the data should acknowledge the original authors of the
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