Information card for entry 4003207

Structure parameters

• Formula: C22 H34 N6 S2 Sn2
• Calculated formula: C22 H34 N6 S2 Sn2
• SMILES: CN(C)C1=[N](c2ccccc2)[Sn]2([N](C)(C)[Sn]3([N]2(C)C)[N](=C(N(C)C)S3)c2ccccc2)S1
• Title of publication: Polymorph-Selective Deposition of High Purity SnS Thin Films from a Single Source Precursor
• Authors of publication: Ahmet, Ibbi Y.; Hill, Michael S.; Johnson, Andrew L.; Peter, Laurence M.
• Journal of publication: Chemistry of Materials
• Year of publication: 2015
• Journal volume: 27
• Journal issue: 22
• Pages of publication: 7680
• a: 6.1351 ± 0.0001 Å
• b: 8.9483 ± 0.0002 Å
• c: 12.4437 ± 0.0003 Å
• α: 93.009 ± 0.001°
• β: 99.232 ± 0.001°
• γ: 94.8946 ± 0.0016°
• Cell volume: 670.31 ± 0.02 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0467
• Residual factor for significantly intense reflections: 0.0437
• Weighted residual factors for significantly intense reflections: 0.1103
• Weighted residual factors for all reflections included in the refinement: 0.1118
• Goodness-of-fit parameter for all reflections included in the refinement: 1.174
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No