Information card for entry 4003364

Structure parameters

• Formula: C30 H32 N2 O2
• Calculated formula: C30 H32 N2 O2
• SMILES: c12C(=O)c3c(c2cc2c(c1)c1c(C2=O)cc(cc1)N(C)CCCC)ccc(c3)N(C)CCCC
• Title of publication: Enhancing the Thermal Stability of Organic Field-Effect Transistors by Electrostatically Interlocked 2D Molecular Packing
• Authors of publication: Fan, Zhi-Ping; Li, Xiang-Yang; Purdum, Geoffrey E.; Hu, Chen-Xia; Fei, Xian; Shi, Zi-Fa; Sun, Chun-Lin; Shao, Xiangfeng; Loo, Yueh-Lin; Zhang, Hao-Li
• Journal of publication: Chemistry of Materials
• Year of publication: 2018
• Journal volume: 30
• Journal issue: 11
• Pages of publication: 3638
• a: 7.5 ± 0.003 Å
• b: 8.528 ± 0.004 Å
• c: 10.009 ± 0.004 Å
• α: 80.48 ± 0.04°
• β: 73.28 ± 0.03°
• γ: 83.45 ± 0.03°
• Cell volume: 603.2 ± 0.5 ų
• Cell temperature: 293.18 ± 0.1 K
• Ambient diffraction temperature: 293.18 ± 0.1 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.2368
• Residual factor for significantly intense reflections: 0.0904
• Weighted residual factors for significantly intense reflections: 0.1812
• Weighted residual factors for all reflections included in the refinement: 0.278
• Goodness-of-fit parameter for all reflections included in the refinement: 0.961
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No