Robust Narrow-Gap Semiconducting Behavior in Square-Net La3Cd2As6
Authors of publication
Piva, Mario M.; Rahn, Marein C.; Thomas, Sean M.; Scott, Brian L.; Pagliuso, Pascoal G.; Thompson, Joe D.; Schoop, Leslie M.; Ronning, Filip; Rosa, Priscila F. S.
Journal of publication
Chemistry of Materials
Year of publication
2021
a
21.732 ± 0.008 Å
b
4.0928 ± 0.0015 Å
c
12.323 ± 0.003 Å
α
90 ± 0.03°
β
100.92 ± 0.03°
γ
90 ± 0.03°
Cell volume
1076.2 ± 0.6 Å3
Cell temperature
293 K
Ambient diffraction temperature
293 K
Number of distinct elements
3
Space group number
12
Hermann-Mauguin space group symbol
C 1 2/m 1
Hall space group symbol
-C 2y
Residual factor for all reflections
0.2586
Residual factor for significantly intense reflections
0.0851
Weighted residual factors for significantly intense reflections
0.0987
Weighted residual factors for all reflections included in the refinement
0.1031
Goodness-of-fit parameter for significantly intense reflections
4.24
Goodness-of-fit parameter for all reflections included in the refinement
