Information card for entry 4030301
| Formula |
C34 H48 N2 Si2 |
| Calculated formula |
C34 H48 N2 Si2 |
| SMILES |
c12ccccc1nc1c(ccc(c1n2)C#C[Si](C(C)C)(C(C)C)C(C)C)C#C[Si](C(C)C)(C(C)C)C(C)C |
| Title of publication |
Soluble Diazaiptycenes: Materials for Solution-Processed Organic Electronics. |
| Authors of publication |
Biegger, Philipp; Stolz, Sebastian; Intorp, Sebastian N.; Zhang, Yexiang; Engelhart, Jens U.; Rominger, Frank; Hardcastle, Kenneth I.; Lemmer, Uli; Qian, Xuhong; Hamburger, Manuel; Bunz, U. H. F. |
| Journal of publication |
The Journal of organic chemistry |
| Year of publication |
2014 |
| Journal volume |
80 |
| Journal issue |
1 |
| Pages of publication |
582 |
| a |
7.5797 ± 0.0017 Å |
| b |
17.349 ± 0.003 Å |
| c |
26.474 ± 0.004 Å |
| α |
103.24 ± 0.015° |
| β |
98.052 ± 0.015° |
| γ |
93.741 ± 0.015° |
| Cell volume |
3338.2 ± 1.1 Å3 |
| Cell temperature |
173 ± 2 K |
| Ambient diffraction temperature |
173 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.2515 |
| Residual factor for significantly intense reflections |
0.093 |
| Weighted residual factors for significantly intense reflections |
0.162 |
| Weighted residual factors for all reflections included in the refinement |
0.2187 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.008 |
| Diffraction radiation wavelength |
1.54178 Å |
| Diffraction radiation type |
CuKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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