Information card for entry 4060155

Structure parameters

• Formula: C32 H52 O2 Si2 Zr
• Calculated formula: C32 H52 O2 Si2 Zr
• Journal of publication: Organometallics
• Year of publication: 2005
• a: 12.2632 ± 0.0007 Å
• b: 10.4353 ± 0.0006 Å
• c: 13.2677 ± 0.0007 Å
• α: 90°
• β: 94.028 ± 0.001°
• γ: 90°
• Cell volume: 1693.68 ± 0.16 ų
• Cell temperature: 243 ± 2 K
• Ambient diffraction temperature: 243 ± 2 K
• Number of distinct elements: 5
• Space group number: 7
• Hermann-Mauguin space group symbol: P 1 n 1
• Hall space group symbol: P -2yac
• Residual factor for all reflections: 0.0261
• Residual factor for significantly intense reflections: 0.0246
• Weighted residual factors for significantly intense reflections: 0.0665
• Weighted residual factors for all reflections included in the refinement: 0.0674
• Goodness-of-fit parameter for all reflections included in the refinement: 1.118
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No