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Information card for entry 4063486
Preview
| Coordinates | 4063486.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C25 H31 Al Cl4 Fe N O2 P Si |
|---|---|
| Calculated formula | C25 H31 Al Cl4 Fe N O2 P Si |
| SMILES | C(#[O])[Fe]1234(C#[O])([cH]5[cH]1[cH]2[cH]3[cH]45)[PH](N(C(C)C)C(C)C)[SiH](c1ccccc1)c1ccccc1.[Al](Cl)(Cl)(Cl)[Cl-] |
| Title of publication | Si‒H Bond Activation by Electrophilic Phosphinidene Complexes |
| Authors of publication | Vaheesar, Kandasamy; Bolton, Timothy M.; East, Allan L. L.; Sterenberg, Brian T. |
| Journal of publication | Organometallics |
| Year of publication | 2010 |
| Journal volume | 29 |
| Journal issue | 2 |
| Pages of publication | 484 - 490 |
| a | 24.434 ± 0.003 Å |
| b | 10.1909 ± 0.0011 Å |
| c | 12.7949 ± 0.0013 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 3186 ± 0.6 Å3 |
| Cell temperature | 193 ± 2 K |
| Ambient diffraction temperature | 193 ± 2 K |
| Number of distinct elements | 9 |
| Space group number | 33 |
| Hermann-Mauguin space group symbol | P n a 21 |
| Hall space group symbol | P 2c -2n |
| Residual factor for all reflections | 0.0393 |
| Residual factor for significantly intense reflections | 0.033 |
| Weighted residual factors for significantly intense reflections | 0.0725 |
| Weighted residual factors for all reflections included in the refinement | 0.0753 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.094 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/4063486.html
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