Information card for entry 4064072

Structure parameters

• Formula: C28 H82 Si12
• Calculated formula: C28 H82 Si12
• SMILES: C[Si](C)(C)[Si](C[Si](C)(C)C)([Si](C)(C)[Si](C)(C)[Si](C)(C)[Si](C)(C)[Si](C[Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)[Si](C)(C)C
• Title of publication: Conformational Control of Polysilanes: Use of CH(2) Spacers in the Silicon Backbone.
• Authors of publication: Wallner, Andreas; Hlina, Johann; Wagner, Harald; Baumgartner, Judith; Marschner, Christoph
• Journal of publication: Organometallics
• Year of publication: 2011
• Journal volume: 30
• Journal issue: 15
• Pages of publication: 3930 - 3938
• a: 8.0514 ± 0.0016 Å
• b: 32.411 ± 0.007 Å
• c: 9.924 ± 0.002 Å
• α: 90°
• β: 111.07 ± 0.03°
• γ: 90°
• Cell volume: 2416.6 ± 1 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 3
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0814
• Residual factor for significantly intense reflections: 0.0597
• Weighted residual factors for significantly intense reflections: 0.1156
• Weighted residual factors for all reflections included in the refinement: 0.124
• Goodness-of-fit parameter for all reflections included in the refinement: 1.113
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No