Information card for entry 4065149

Structure parameters

• Formula: C32 H72 Mg2 N4 Si2
• Calculated formula: C32 H72 Mg2 N4 Si2
• SMILES: C[Si]1(C)C[N]2(CCCCC2)[Mg]([CH2](CCC)[Mg]23N(C(C)(C)C)[Si](C)(C)C[N]43CCCCC4)(N1C(C)(C)C)[CH2]2CCC
• Title of publication: Control of N- or C-Bridging Mode in Dimeric Butylmagnesium Silylamides
• Authors of publication: Colquhoun, Victoria P.; Abele, Bors C.; Strohmann, Carsten
• Journal of publication: Organometallics
• Year of publication: 2011
• Journal volume: 30
• Journal issue: 20
• Pages of publication: 5408
• a: 9.121 ± 0.002 Å
• b: 10.235 ± 0.002 Å
• c: 10.943 ± 0.002 Å
• α: 97.28 ± 0.04°
• β: 102.2 ± 0.04°
• γ: 92.947 ± 0.004°
• Cell volume: 987.2 ± 0.4 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0656
• Residual factor for significantly intense reflections: 0.0507
• Weighted residual factors for significantly intense reflections: 0.1302
• Weighted residual factors for all reflections included in the refinement: 0.1436
• Goodness-of-fit parameter for all reflections included in the refinement: 1.02
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No