Information card for entry 4065842

Structure parameters

• Formula: C32 H52 Cd Ga I N4
• Calculated formula: C32 H52 Cd Ga I N4
• SMILES: I[Cd]1([Ga]2N(C=CN2c2c(cccc2C(C)C)C(C)C)c2c(cccc2C(C)C)C(C)C)[N](CC[N]1(C)C)(C)C
• Title of publication: Group 2 and 12 Metal Gallyl Complexes Containing Unsupported Ga−M Covalent Bonds (M = Mg, Ca, Sr, Ba, Zn, Cd)†
• Authors of publication: Bonello, Owen; Jones, Cameron; Stasch, Andreas; Woodul, William D.
• Journal of publication: Organometallics
• Year of publication: 2010
• Journal volume: 29
• Journal issue: 21
• Pages of publication: 4914
• a: 11.368 ± 0.002 Å
• b: 14.249 ± 0.003 Å
• c: 21.409 ± 0.004 Å
• α: 90°
• β: 95.88 ± 0.03°
• γ: 90°
• Cell volume: 3449.6 ± 1.2 ų
• Cell temperature: 123 ± 2 K
• Ambient diffraction temperature: 123 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.1104
• Residual factor for significantly intense reflections: 0.0555
• Weighted residual factors for significantly intense reflections: 0.0617
• Weighted residual factors for all reflections included in the refinement: 0.0702
• Goodness-of-fit parameter for all reflections included in the refinement: 1.038
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No