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Information card for entry 4067406
Preview
Coordinates | 4067406.cif |
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Original paper (by DOI) | HTML |
Formula | C32 H28 Cl2 Si Zr |
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Calculated formula | C32 H28 Cl2 Si Zr |
SMILES | [Zr]123456789(Cl)(Cl)[c]%10([Si]([c]%115[cH]6[c]7([c]58cccc[c]9%115)Cc5ccccc5)(C)C)[c]1([cH]2[c]13c2c(cc[c]4%101)cccc2)C |
Title of publication | Rotating Benzyl Substituent inansa-Bis(indenyl)zirconocenes Controls Propene Polymerization |
Authors of publication | Puranen, Arto; Linnolahti, Mikko; Piel, Tanja; Elo, Pertti; Mutikainen, Ilpo; Pakkanen, Tapani; Löfgren, Barbro; Aitola, Erkki; Seppälä, Jukka; Leskelä, Markku; Repo, Timo |
Journal of publication | Organometallics |
Year of publication | 2010 |
Journal volume | 29 |
Journal issue | 18 |
Pages of publication | 4018 |
a | 10.5424 ± 0.0007 Å |
b | 11.2813 ± 0.0008 Å |
c | 13.1506 ± 0.001 Å |
α | 95.893 ± 0.003° |
β | 106.903 ± 0.003° |
γ | 112.388 ± 0.004° |
Cell volume | 1342.8 ± 0.18 Å3 |
Cell temperature | 153 ± 2 K |
Ambient diffraction temperature | 153 ± 2 K |
Number of distinct elements | 5 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.0774 |
Residual factor for significantly intense reflections | 0.0578 |
Weighted residual factors for significantly intense reflections | 0.1366 |
Weighted residual factors for all reflections included in the refinement | 0.1494 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.059 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/4067406.html
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Users of the data should acknowledge the original authors of the
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