Information card for entry 4067858

Structure parameters

• Formula: C28 H52 P2 S2 Si4
• Calculated formula: C28 H52 P2 S2 Si4
• SMILES: P(P(C([Si](C)(C)C)[Si](C)(C)C)c1ccccc1SC)(C([Si](C)(C)C)[Si](C)(C)C)c1ccccc1SC
• Title of publication: Hypervalent Sulfur-Functionalized Diphosphagermylene and Diphosphastannylene Compounds
• Authors of publication: Izod, Keith; Clark, Ewan R.; Clegg, William; Harrington, Ross W.
• Journal of publication: Organometallics
• Year of publication: 2012
• Journal volume: 31
• Journal issue: 1
• Pages of publication: 246
• a: 19.6717 ± 0.0007 Å
• b: 11.3658 ± 0.0004 Å
• c: 15.8141 ± 0.0005 Å
• α: 90°
• β: 91.836 ± 0.003°
• γ: 90°
• Cell volume: 3534 ± 0.2 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0533
• Residual factor for significantly intense reflections: 0.0477
• Weighted residual factors for significantly intense reflections: 0.1152
• Weighted residual factors for all reflections included in the refinement: 0.1195
• Goodness-of-fit parameter for all reflections included in the refinement: 1.061
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No