Information card for entry 4069408

Structure parameters

• Formula: C22 H48 Ge I N Si4
• Calculated formula: C22 H48 Ge I N Si4
• SMILES: N(C[Ge](I)(C([Si](C)(C)C)[Si](C)(C)C)C([Si](C)(C)C)[Si](C)(C)C)(C)c1ccccc1
• Title of publication: Silylene- and Germylene-Mediated C−H Activation: Reaction with Alkanes, Ethers, and Amines
• Authors of publication: Walker, Randon H.; Miller, Karla A.; Scott, Sara L.; Cygan, Zuzanna T.; Bartolin, Jeffrey M.; Kampf, Jeff W.; Banaszak Holl, Mark M.
• Journal of publication: Organometallics
• Year of publication: 2009
• Journal volume: 28
• Journal issue: 9
• Pages of publication: 2744
• a: 9.5644 ± 0.0018 Å
• b: 10.362 ± 0.002 Å
• c: 16.856 ± 0.003 Å
• α: 102.125 ± 0.004°
• β: 93.528 ± 0.004°
• γ: 109.538 ± 0.003°
• Cell volume: 1523.4 ± 0.5 ų
• Cell temperature: 118 ± 2 K
• Ambient diffraction temperature: 118 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.04
• Residual factor for significantly intense reflections: 0.0311
• Weighted residual factors for significantly intense reflections: 0.0808
• Weighted residual factors for all reflections included in the refinement: 0.085
• Goodness-of-fit parameter for all reflections included in the refinement: 1.05
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No