Information card for entry 4070735

Structure parameters

• Formula: C54 H110 Al2 Li2 N2 O4 Si4
• Calculated formula: C54 H110 Al2 Li2 N2 O4 Si4
• SMILES: [AlH]1(N(C([Si](C)(C)C)[Si](C)(C)C)c2c(cccc2C(C)C)C(C)C)[H][Li]([O]2CCCC2)([O]2CCCC2)[H][AlH](N(C([Si](C)(C)C)[Si](C)(C)C)c2c(cccc2C(C)C)C(C)C)[H][Li]([O]2CCCC2)([O]2CCCC2)[H]1
• Title of publication: Synthesis and Characterization of the Monomeric Vicinal Dianion Li~2~(THF)~3~[ArNC(SiMe~3~)~2~] and the Aluminum and Lithium Derivatives of the Amido Ligand [ArNCH(SiMe~3~)~2~]^-^
• Authors of publication: Cheng, Xiaoyan; Zhang, Jianying; Song, Haibin; Cui, Chunming
• Journal of publication: Organometallics
• Year of publication: 2008
• Journal volume: 27
• Journal issue: 4
• Pages of publication: 678 - 682
• a: 13.225 ± 0.002 Å
• b: 17.355 ± 0.003 Å
• c: 14.27 ± 0.003 Å
• α: 90°
• β: 95.577 ± 0.002°
• γ: 90°
• Cell volume: 3259.7 ± 1 ų
• Cell temperature: 113 ± 2 K
• Ambient diffraction temperature: 113 ± 2 K
• Number of distinct elements: 7
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0689
• Residual factor for significantly intense reflections: 0.0562
• Weighted residual factors for significantly intense reflections: 0.1312
• Weighted residual factors for all reflections included in the refinement: 0.1392
• Goodness-of-fit parameter for all reflections included in the refinement: 1.072
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No