Information card for entry 4071266

Structure parameters

• Formula: C54 H101 Ga2 N O2 Si
• Calculated formula: C54 H101 Ga2 N O2 Si
• Title of publication: A Carbon-Bridged Digallium Compound as a Chelating Lewis Acid: Complexation of Thiophenolate and Benzoate Anions by H5C6−CH2−C(SiMe3)[Ga(CH2tBu)2]2
• Authors of publication: Uhl, Werner; Claesener, Michael; Hepp, Alexander
• Journal of publication: Organometallics
• Year of publication: 2008
• Journal volume: 27
• Journal issue: 9
• Pages of publication: 2118
• a: 11.4755 ± 0.0016 Å
• b: 21.41 ± 0.003 Å
• c: 23.672 ± 0.003 Å
• α: 90°
• β: 90.414 ± 0.003°
• γ: 90°
• Cell volume: 5815.8 ± 1.4 ų
• Cell temperature: 153 ± 2 K
• Ambient diffraction temperature: 153 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.1238
• Residual factor for significantly intense reflections: 0.0584
• Weighted residual factors for significantly intense reflections: 0.1148
• Weighted residual factors for all reflections included in the refinement: 0.1376
• Goodness-of-fit parameter for all reflections included in the refinement: 0.974
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No