Information card for entry 4071610

Structure parameters

• Formula: C32 H51 Ge N2 P Si
• Calculated formula: C32 H51 Ge N2 P Si
• SMILES: [Ge]1(P[Si](C)(C)C)[N](=C(C)C=C(N1c1c(cccc1C(C)C)C(C)C)C)c1c(cccc1C(C)C)C(C)C
• Title of publication: Facile Access to a Stable Divalent Germanium Compound with a Terminal PH2Group and Related PR2Derivatives
• Authors of publication: Yao, Shenglai; Brym, Markus; Merz, Klaus; Driess, Matthias
• Journal of publication: Organometallics
• Year of publication: 2008
• Journal volume: 27
• Journal issue: 14
• Pages of publication: 3601
• a: 8.9098 ± 0.0004 Å
• b: 19.6084 ± 0.0009 Å
• c: 19.6505 ± 0.001 Å
• α: 90°
• β: 90.364 ± 0.001°
• γ: 90°
• Cell volume: 3433 ± 0.3 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.073
• Residual factor for significantly intense reflections: 0.0519
• Weighted residual factors for significantly intense reflections: 0.1187
• Weighted residual factors for all reflections included in the refinement: 0.1321
• Goodness-of-fit parameter for all reflections included in the refinement: 1.042
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No