Information card for entry 4071875

Structure parameters

• Formula: C46 H138 Si22
• Calculated formula: C46 H138 Si22
• SMILES: C[Si](C)(C)[Si]([Si](C)(C)[Si](C)([Si]([Si](C)([Si](C)(C)[Si](C)(C)[Si](C)(C)[Si]([Si](C)(C)[Si](C)(C)[Si]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)C)([Si](C)(C)C)[Si](C)(C)C)C)([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Structure, Conformation, and UV Absorption Behavior of Partially Trimethylsilylated Oligosilane Chains
• Authors of publication: Wallner, Andreas; Wagner, Harald; Baumgartner, Judith; Marschner, Christoph; Rohm, Henning W.; Köckerling, Martin; Krempner, Clemens
• Journal of publication: Organometallics
• Year of publication: 2008
• Journal volume: 27
• Journal issue: 20
• Pages of publication: 5221
• a: 9.2052 ± 0.0018 Å
• b: 9.6344 ± 0.0019 Å
• c: 27.109 ± 0.005 Å
• α: 94.89 ± 0.03°
• β: 95.07 ± 0.03°
• γ: 116.65 ± 0.03°
• Cell volume: 2119.2 ± 0.9 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 3
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1428
• Residual factor for significantly intense reflections: 0.0985
• Weighted residual factors for significantly intense reflections: 0.199
• Weighted residual factors for all reflections included in the refinement: 0.2149
• Goodness-of-fit parameter for all reflections included in the refinement: 1.158
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No