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Information card for entry 4074167
Preview
Coordinates | 4074167.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C64 H65 N4 O Rh Si |
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Calculated formula | C64 H63 N4 O Rh Si |
SMILES | [Rh]123([Si](c4ccccc4)(C)C)n4c5=C(c6[n]3c(=C(c3n2c(C(=c2[n]1c(C(=c4cc5)c1c(cc(cc1C)C)C)cc2)c1c(cc(cc1C)C)C)cc3)c1c(cc(cc1C)C)C)cc6)c1c(cc(cc1C)C)C.O |
Title of publication | Facile Synthesis of Rhodium(III) Porphyrin Silyls by Silicon−Hydrogen Bond Activation with Rhodium(III) Porphyrin Halides and Methyls |
Authors of publication | Zhang, Lirong; Chan, Kin Shing |
Journal of publication | Organometallics |
Year of publication | 2006 |
Journal volume | 25 |
Journal issue | 20 |
Pages of publication | 4822 |
a | 28.4903 ± 0.0014 Å |
b | 28.4903 ± 0.0014 Å |
c | 14.7397 ± 0.0016 Å |
α | 90° |
β | 90° |
γ | 90° |
Cell volume | 11964.2 ± 1.5 Å3 |
Cell temperature | 293 ± 2 K |
Ambient diffraction temperature | 293 ± 2 K |
Number of distinct elements | 6 |
Space group number | 80 |
Hermann-Mauguin space group symbol | I 41 |
Hall space group symbol | I 4bw |
Residual factor for all reflections | 0.1901 |
Residual factor for significantly intense reflections | 0.0888 |
Weighted residual factors for significantly intense reflections | 0.221 |
Weighted residual factors for all reflections included in the refinement | 0.3125 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.034 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/4074167.html
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